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| Mini PROFET(R) BSP 452 MiniPROFET * High-side switch * Short-circuit protection * Input protection * Overtemperature protection with hysteresis * Overload protection * Overvoltage protection * Switching inductive load * Clamp of negative output voltage with inductive loads * Undervoltage shutdown * Maximum current internally limited * Electrostatic discharge (ESD) protection * Reverse battery protection1) Package: SOT 223 Type Ordering code Q67000-S271 4 3 2 1 BSP 452 Application * C compatible power switch for 12 V DC grounded loads * All types of resistive, inductive and capacitive loads * Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input,monolithically integrated in Smart SIPMOS(R) technology. Fully protected by embedded protection functions. Blockdiagramm: + Vbb 4 Voltage source ESDDiode Overvoltage protection Current limit Gate protection V Logic Voltage sensor Charge pump Level shifter Rectifier Limit for unclamped ind. loads OUT Temperature sensor 1 3 R IN in Load ESD Logic GND MINI-PROFET Load GND 2 Signal GND 1) With resistor R GND=150 in GND connection, resistor in series with IN connections reverse load current limited by connected load. Semiconductor Group 1 08.96 Mini PROFET(R) BSP 452 Pin 1 2 3 4 Symbol OUT GND IN Vbb O I + Function Output to the load Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage Load current self-limited 2) Maximum input voltage Maximum input current Inductive load switch-off energy dissipation, single pulse IL = 0.5A , TA = 150C (not tested, specified by design) Load dump protection3) VLoadDump=UA+Vs RL= 24 RI=2 , td=400ms, IN= low or high, UA=12V RL= 80 (not tested, specified by design) Electrostatic discharge capability (ESD)5) PIN 3 PIN 1,2,4 Operating temperature range Storage temperature range Max. power dissipation (DC)6) Thermal resistance Symbol Vbb IL VIN IIN EAS Values 40 Unit V A V mA J IL(SC) -5.0...Vbb 5 0.5 VLoad dump4) 47 67 1 2 -40 ...+150 -55 ...+150 1.8 7 70 V VESD Tj Tstg Ptot RthJS RthJA kV C W K/W TA = 25 C chip - soldering point: chip - ambient:6) 2) At V > V , the input current is not allowed to exceed 5 mA. IN bb 3) Supply voltages higher than V bb(AZ) require an external current limit for the GND pin, e.g. with a 150 resistor in the GND connection A resistor for the protection of the input is integrated. 4) V Load dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 5) HBM according to MIL-STD 883D, Methode 3015.7 6) BSP 452 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for V connection bb Semiconductor Group 2 Mini PROFET(R) BSP 452 Electrical Characteristics Parameter and Conditions at Tj = 25 C, Vbb = 13.5V unless otherwise specified Symbol Values min typ Unit max Load Switching Capabilities and Characteristics On-state resistance (pin 4 to 1) IL = 0.5 A, Vin = high Tj = 25C Tj = 150C Nominal load current (pin 4 to 1)7) ISO Standard: VON = Vbb - VOUT = 0.5 V TS = 85 C Turn-on time to 90% VOUT Turn-off time to 10% VOUT RL = 24 Slew rate on 10 to 30% VOUT, RL = 24 Slew rate off 70 to 40% VOUT, RL = 24 RON IL(ISO) --1.7 0.16 --- 0.2 0.4 -- A ton toff dV /dton -dV/dtoff ----- 60 60 2 2 100 150 4 4 s V/s V/s Input Allowable input voltage range, (pin 3 to 2) Input turn-on threshold voltage Tj = -40...+150C Input turn-off threshold voltage Tj = -40...+150C Input threshold hysteresis Off state input current (pin 3) VIN(off) = 1.2 V Tj = -40...+150C On state input current (pin 3) VIN(on) = 3.0 V to Vbb Tj = -40...+150C Input resistance VIN VIN(T+) VIN(T-) VIN(T) IIN(off) IIN(on) RIN -3.0 -1.5 -10 10 1.5 ---0.5 --2.8 Vbb 3.5 --60 100 3.5 V V V V A A k 7) I L(ISO) characterizes the MOSFET part of the device and may be higher than the shortcircuit current IL(SC) of the whole device Semiconductor Group 3 Mini PROFET(R) BSP 452 Parameter and Conditions at Tj = 25 C, Vbb = 13.5V unless otherwise specified Symbol Values min typ Unit max Operating Parameters Operating voltage8) Undervoltage shutdown Undervoltage restart Tj =-40...+150C Tj =-40...+150C Tj =-40...+25C Tj =+150C Undervoltage restart of charge pumpe see diagram page 7 Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Tj =-40...+150C Overvoltage shutdown Tj =-40...+150C Overvoltage restart Tj =-40...+150C Overvoltage hysteresis Standby current (pin 4), Vin = low Tj =-40...+150C Operating current (pin 2), Vin = 5 V Tj =-40...+25C leakage current (pin 1) Vin = low Tj =150C Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) Vbb(under) 5.0 3.5 ---34 33 ----- ---5.6 0.3 --0.7 10 1 2 34 5 6.5 7.0 7 -42 --25 1.6 5 7 V V V V V V V V A mA A Vbb(over) Vbb(o rst) Vbb(over) Ibb(off) IGND IL(off) Protection Functions Tj = 25C Current limit (pin 4 to 1) Vbb = 20V Tj = -40...+150C Overvoltage protection Ibb=4mA Tj =-40...+150C Output clamp (ind. load switch off) at VOUT=Vbb-VON(CL), Ibb = 4mA Thermal overload trip temperature Thermal hysteresis Inductive load switch-off energy dissipation9) Tj Start = 150 C, single pulse, IL = 0.5 A, Vbb = 12 V (not tested, specified by design) Reverse battery (pin 4 to 2) 10) (not tested, specified by design) IL(SC) Vbb(AZ) VON(CL) Tjt Tjt EAS 0.7 0.7 41 41 150 --- 1.5 --47 -10 -- 2 2.4 ----0.5 A V V C K J -Vbb -- -- 30 V 8) At supply voltage increase up to V = 5.6 V typ without charge pump, V bb OUT Vbb - 2 V 9) While demagnetizing load inductance, dissipated energy in PROFET is E = V AS ON(CL) * iL(t) dt, approx. 1/ * L * I2 * ( VON(CL) EAS= 2 ) L VON(CL) - Vbb 10) Requires 150 resistor in GND connection. Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Semiconductor Group 4 Mini PROFET(R) BSP 452 Max. allowable power dissipation Ptot = f (TA,TSP) Ptot [W] 18 16 14 12 TSP 10 1 Current limit characteristic IL(SC) = f (Von); (Von see testcircuit) IL(SC) [A] 2 1.8 1.6 1.4 1.2 150C 25C -40C 8 0.8 6 0.6 4 TA 2 0 0 25 50 75 100 125 150 0.4 0.2 0 0 2 4 6 8 10 12 14 TA, TSP[C] Von [V] On state resistance (Vbb-pin to OUT-pin) RON = f (Tj); Vbb = 13.5 V; IL = 0.5 A RON [] 0.4 0.35 0.3 Typ. input current IIN = f (VIN); Vbb = 13,5 V IIN [A] 50 -40C 45 40 35 + 25C 0.25 0.2 0.15 0.1 98% 30 25 20 15 10 + 150C 0.05 0 -50 -25 0 25 50 75 100 125 150 5 0 0 2 4 6 8 10 12 14 Tj [C] VIN [V] Semiconductor Group 5 Mini PROFET(R) BSP 452 Typ. operating current IGND = f (Tj); Vbb = 13,5 V; VIN = high IGND [mA] 0.8 0.7 0.6 1 Typ. overload current IL(lim) = f (t); Vbb = 13,5 V, no heatsink, Param.: Tjstart IL(lim) [A] 1.4 1.2 0.5 0.8 0.4 0.6 +150C +25C -40C 0.3 0.2 0.1 0 -50 0.4 0.2 0 -25 0 25 50 75 100 125 150 -50 0 50 100 150 200 250 300 350 400 Tj [C] t [ms] Typ. standby current Ibb(off) = f (Tj); Vbb = 13,5 V; VIN = low Ibb(off) [A] 8 7 6 5 Short circuit current IL(SC) = f (Tj); Vbb = 13,5 V IL(SC) [A] 1.4 1.2 1 0.8 4 0.6 3 0.4 2 1 0 -50 -25 0 25 50 75 100 125 150 0.2 0 -50 -25 0 25 50 75 100 125 150 Tj [C] Tj [C] Semiconductor Group 6 Mini PROFET(R) BSP 452 Typ. input turn on voltage threshold VIN(T+) = f (Tj); VIN(T+) [V] 3 13V 2.5 Figure 6: Undervoltage restart of charge pumpe VON [V] 2 1.5 V bb(over) V bb(o rs t) V bb(u rs t) 1 0.5 V 0 -50 -25 0 25 50 75 100 125 150 bb(under) V bb(u c p) Tj [C] Vbb [V] charge pump starts at Vbb(ucp) about 7 V typ. Typ. on-state resistance (Vbb-Pin to Out-Pin) RON = f (Vbb,IL); IL=0.5A, Tj = 25C RON [m] 300 Test circuit 250 200 150 100 50 0 0 5 10 15 20 25 Vbb [V] Semiconductor Group 7 Mini PROFET(R) BSP 452 Package: all dimensions in mm. SOT 223/4: Semiconductor Group 8 |
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